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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D381
BLF1046 UHF power LDMOS transistor
Product specification Supersedes data of 2000 Oct 04 2000 Dec 20
Philips Semiconductors
Product specification
UHF power LDMOS transistor
FEATURES * High power gain * Easy power control * Excellent ruggedness * Source on underside eliminates DC isolators, reducing common mode inductance * Designed for broadband operation (HF to 1 GHz). APPLICATIONS * Communication transmitter applications in the UHF frequency range.
3 1
BLF1046
PINNING - SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION
DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 C in the common source broadband test circuit. MODE OF OPERATION CW, class-AB (2-tone) CW, class-AB (1-tone) f (MHz) f1 = 960; f2 = 960.1 960 VDS (V) 26 26 PL (W) 45 (PEP) 45
2 Top view
MBK584
Fig.1 Simplified outline.
Gp (dB) >14 >14
D (%) >35 >46
dim (dBc) -26 -
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Tstg Tj drain-source voltage gate-source voltage drain current (DC) storage temperature junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. PARAMETER - - - -65 - MIN. 65 20 4.5 +150 200 MAX. V V A C C UNIT
2000 Dec 20
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-h Note PARAMETER thermal resistance from junction to heatsink CONDITIONS Th = 25 C; Pdis = 97 W; note 1 VALUE 1.87
BLF1046
UNIT K/W
1. Determined under specified RF operating conditions, based on maximum peak junction temperature. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Cis Cos Crs PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 0.7 mA VDS = 10 V; ID = 70 mA VGS = 0; VDS = 26 V VGS = VGSth + 9 V; VDS = 10 V VGS = 20 V; VDS = 0 VDS = 10 V; ID = 3.5 A VGS = VGSth + 9 V; ID = 3.5 A VGS = 0; VDS = 26 V; f = 1 MHz VGS = 0; VDS = 26 V; f = 1 MHz VGS = 0; VDS = 26 V; f = 1 MHz MIN. 65 4 - 12.5 - - - - - - TYP. - - - - - 2 300 46 37 1.5 MAX. - 5 1 - 125 - - - - - UNIT V V A A nA S m pF pF pF
APPLICATION INFORMATION RF performance in the common source class-AB broadband test circuit. Th = 25 C; Rth j-h = 1.87 K/W, unless otherwise specified. MODE OF OPERATION CW, class-AB (2-tone) CW, class-AB (1-tone) Ruggedness in class-AB operation The BLF1046 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 960 MHz at rated load power. Tuning Procedure For high gain and efficiency: In CW mode (PD = 1 W; f = 960 MHz) tune C2 and C16 (see Figs. 13 and 14) until IRL < -15 dB, then adjust C6 and C8 for high gain until Gp > 14 dB at PL = 50 W. For linear mode: Tune for high gain and efficiency mode, then apply two tone signal (f1 = 960 MHz; f2 = 960.1 MHz) at PL = 45 W (PEP) and tune first C2 and then C6 and C8 for lowest d3 (below -28 dBc). f (MHz) f1 = 960; f2 = 960.1 960 VDS (V) 26 26 IDQ (mA) 300 300 PL (W) 45 (PEP) 45 Gp (dB) >14 >14 D (%) >35 >46 dim (dBc) -26 -
2000 Dec 20
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1046
handbook, halfpage
20
MLD455
80 D (%) 60
handbook, halfpage
20
MLD456
80 Gp D D (%) 60
Gp (dB) 15
Gp
D PAE
Gp (dB) 15
10
40
10
40
5
20
5
20
0 0 20 40 PL (W) 60
0
0 0 20 40 60 PL (W) 80
0
VDS = 26 V; IDQ = 330 mA; Th 25 C; f = 960 MHz; tuned for high efficiency; see tuning procedure.
VDS = 26 V; IDQ = 330 mA; Th 25 C; f = 960 MHz; tuned for high linearity; see tuning procedure
Fig.2
Power gain and drain efficiency as functions of load power; typical values.
Fig.3
Power gain and drain efficiency as functions of load power; typical values.
handbook, halfpage
20
MLD457
80 D (%) 60
handbook, halfpage
0
MLD458
Gp (dB) 15
(3) (1)
(2)
d3 (dB) -20
(1)
10
40
-40
(2) (3)
D 5 20 -60
0 0 10 20 30 50 40 PL (PEP) (W)
0
-80
0
10
20
30
50 40 PL (PEP) (W)
VDS = 26 V; Th 25 C; f1 = 960 MHz; f2 = 960.1 MHz; tuned for high linearity; see tuning procedure. (1) IDQ = 240 mA. (2) IDQ = 300 mA. (3) IDQ = 400 mA.
VDS = 26 V; Th 25 C; f1 = 960 MHz; f2 = 960.1 MHz; tuned for high linearity; see tuning procedure. (1) IDQ = 240 mA. (2) IDQ = 300 mA. (3) IDQ = 400 mA.
Fig.5
Fig.4
Power gain and drain efficiency as functions of peak envelope power; typical values.
Third order intermodulation distortion as a function of peak envelope load power; typical values.
2000 Dec 20
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1046
handbook, halfpage
0
MLD459
handbook, halfpage
0
MLD460
d5 (dBc) -20
d7 (dBc) -20
-40
(1) (3)
-40
(1)
(3)
-60
(2)
-60
(2)
50 40 PL (PEP) (W) VDS = 26 V; Th 25 C; f1 = 960 MHz; f2 = 960.1 MHz; tuned for high linearity; see tuning procedure. (1) IDQ = 240 mA. (2) IDQ = 300 mA. (3) IDQ = 400 mA. 0 10 20 30
-80
-80
0
10
20
30
50 40 PL (PEP) (W)
VDS = 26 V; Th 25 C; f1 = 960 MHz; f2 = 960.1 MHz; tuned for high linearity; see tuning procedure. (1) IDQ = 240 mA. (2) IDQ = 300 mA. (3) IDQ = 400 mA.
Fig.6
Fifth order intermodulation distortion as a function of peak envelope load power; typical values.
Fig.7
Seventh order intermodulation distortion as a function of peak envelope load power; typical values.
handbook, halfpage
10
MLD461
handbook, halfpage
20
MLD462
40 Gp (%) 30
EVM (%) 8
peak
Gp (dB) 15
6 10 4 5 EVM (%) 0 0 4 8 12 16 PL (W) 20 0 4
20
rms 2
10
EVM 0 8 12 16 PL (W) 20
0
VDS = 26 V; IDQ = 300 mA; Th 25 C; f = 960 MHz; tuned for high linearity; see tuning procedure.
VDS = 26 V; IDQ = 300 mA; Th 25 C; f = 960 MHz; tuned for high linearity; see tuning procedure.
Fig.8
Error vector magnitude (EVM) / EDGE 8PSK as a functions of load power; typical values.
Fig.9
EDGE 8PSK EVM, gain and efficiency as functions of load power; typical values.
2000 Dec 20
5
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1046
handbook, halfpage
0
MLD463
handbook, halfpage
20
MLD464
80 D (%) 60
ACPR (dBc) -20
Gp (dB) 15 Gp
-40
10 200 KHz 250 KHz
D
40
-60
400 KHz
5
20
-80
0
4
8
12
16 PL (W)
20
0 850
900
950
f (MHz)
0 1000
VDS = 26 V; IDQ = 300 mA; Th 25 C; f = 960 MHz; tuned for high linearity; see tuning procedure. Measured EDGE channel bandwidth 270 kHz and adjacent channels bandwidth 30 kHz.
VDS = 28 V; IDQ = 300 mA; PL = 45 W (PEP); Th 25 C; tuned for high linearity; see tuning procedure Measured in broadband test circuit; see Figs. 15 and 16.
Fig.10 EDGE 8PSK adjacent channel power as a function of load power; typical values.
Fig.11 Power gain and drain efficiency as functions of frequency; typical values.
handbook, halfpage
0
MLD465
dim (dBc) -20 d3 -40 d5 d7 -60
-80 850
900
950
f (MHz)
1000
VDS = 28 V; IDQ = 300 mA; PL = 45 W (PEP); Th 25 C; tuned for high linearity; see tuning procedure Measured in broadband test circuit; see Figs. 15 and 16.
Fig.12 Intermodulation distortion as a function of frequency; typical values.
2000 Dec 20
6
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1046
handbook, halfpage
4
MLD468
handbook, halfpage
4
MLD469
Zi () 2 ri
ZL () 2
RL
0
xi
0
XL
-2
-2
-4 840
880
920
f (MHz)
960
-4 840
880
920
f (MHz)
960
VDS = 26 V; IDQ = 300 mA; PL = 45 W; Th 25 C; tuned for high linearity; see tuning procedure.
VDS = 26 V; IDQ = 300 mA; PL = 45 W; Th 25 C; tuned for high linearity; see tuning procedure.
Fig.13 Optimal source impedance as a function of frequency (series components); typical values.
Fig.14 Optimal load impedance as a function of frequency (series components); typical values.
2000 Dec 20
7
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1046
R5
handbook, full pagewidth
R1 C14 R2 C15
VDS (26 V)
C13
F1 R3 C11
C9
C10
R4 C3 L1 L6
L2 C5
L8 50 input L3 C1 L4 L5 C16 C2 C6 C4 L7
C7
L9 50 output C8
MLD466
Fig.15 Class-AB broadband test circuit at f = 800 to 1000 MHz.
handbook, full pagewidth
IDQ adjustment
+ 26 V ground
C13 F1 C9 R4 input C1 C16 C2 L1
R1 R5 R2 R3 C10 C3 G TR D C4 C6 C8 C11 C12 C14 C15 output L2 C5 C7
39 mm
MLD467
Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (r = 2.2), thickness 0.79 mm. The other side is unetched and serves as a ground plane.
Fig.16 Component layout for 800 to 1000 MHz class-AB broadband test circuit.
2000 Dec 20
8
Philips Semiconductors
Product specification
UHF power LDMOS transistor
List of components (see Figs 15 and 16) COMPONENT C1, C7 C2, C6 C3, C4 C5 C8, C16 C9, C11 C10, C12 C13, C14 C15 F1 L1 L2 L3 L4 L5 L6 L7 L8 L9 R1, R5 R2 R3 R4 Notes 1. American Technical Ceramics type 100B or capacitor of same quality. DESCRIPTION Tekelec variable capacitor VALUE 0.8 to 8.2 pF DIMENSIONS
BLF1046
CATALOGUE NO.
multilayer ceramic chip capacitor; note 1 33 pF multilayer ceramic chip capacitor; note 1 13 pF multilayer ceramic chip capacitor; note 1 7.5 pF Tekelec variable capacitor 0.5 to 4.6 pF multilayer ceramic chip capacitor; note 1 33 pF multilayer ceramic chip capacitor; note 1 150 pF multilayer ceramic chip capacitor electrolytic capacitor Ferroxcube chip-bead 8DS3/3/8/9-4S2 5 turns enamelled 0.6 mm copper wire 2 turns enamelled 0.6 mm copper wire stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 metal film resistor variable resistor metal film resistor metal film resistor 50 42.5 14.3 20.2 14.3 40 50 10 k, 0.6 W 10 k 1 k, 0.6 W 10 , 0.6 W int. dia. = 4 mm; length = 5 mm int. dia. = 4 mm; length = 1.6 mm 16 x 2.36 mm 16 x 3.1 mm 6 x 12 mm 3 x 8 mm 14 x 12 mm 17 x 3.4 mm 7 x 2.36 mm 33 nF 47 F; 63 V 4330 030 36301
2. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (r = 2.2); thickness 0.79 mm.
2000 Dec 20
9
Philips Semiconductors
Product specification
UHF power LDMOS transistor
PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
BLF1046
SOT467C
D
A F
3
D1
U1 q C
B c
1
E1 H U2 E
A
p
w1 M A M B M
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inch A 4.67 3.94 b 5.59 5.33 c 0.15 0.10 D 9.25 9.04 D1 9.27 9.02 E 5.92 5.77 0.233 0.227 E1 5.97 5.72 F 1.65 1.40 H 18.54 17.02 0.73 0.67 p 3.43 3.18 Q 2.21 1.96 q 14.27 U1 20.45 20.19 U2 5.97 5.72 w1 0.25 w2 0.51
0.184 0.220 0.006 0.155 0.210 0.004
0.364 0.365 0.356 0.355
0.235 0.065 0.225 0.055
0.135 0.087 0.805 0.235 0.562 0.010 0.020 0.125 0.077 0.795 0.225
OUTLINE VERSION SOT467C
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-12-06 99-12-28
2000 Dec 20
10
Philips Semiconductors
Product specification
UHF power LDMOS transistor
DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1)
BLF1046
This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Preliminary specification
Qualification
Product specification
Production
Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified
2000 Dec 20
11
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For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000
Internet: http://www.semiconductors.philips.com
SCA 70
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/07/pp12
Date of release: 2000
Dec 20
Document order number:
9397 750 07658

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